Scientific Research Division
Hsin-Yi Lee (李信義), Ph. D.
Research Scientist
Materials Science Group
Office: Room S120, R&D Building
E-Mail: hylee@nsrrc.org.tw,
Tel: +886-35780281-7120
Education
1993－1996 Ph.D. in Department of Materials Science and Engineering, National Tsing Hua University
1982－1984 M.S. in Institute of Materials Science and Engineering, National Sun Yat-Sen University
1980－1982 B.S. in Mechanical Engineering, National Taiwan Institute of Technology
Employment
• Research Scientist, National Synchrotron Radiation Research Center (since 2012)
• Adjunct Professor, Dept. of Materials Science and Engineering, National Chiao Tung University (since 2012)
• Adjunct Associate Professor, Dept. of Materials Science and Engineering, National Chiao Tung University (2008-2011)
• Associate Research Scientist, National Synchrotron Radiation Research Center (1998-2011)
• Assistant Research Scientist, National Synchrotron Radiation Research Center (1987-1998)
• Visiting Scholar, Dept. of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Illinois, USA (1988-1990)
• Assistant Research Scientist, Institute of Nuclear Energy Research (1984-1987)
• Engineer, China Shipbuilding Corporation (1976-1980)
Research Interest
• Real-time X-ray scattering study of growth mechanism of thin-film materials
• Structural study of nano epitaxial thin-film and interface
• Growth of pervoskite type oxide superlattice by RF sputtering
• Development of multiferroic superlattice structures with RF magnetron sputtering
• Epitaxial growth of ZnO-based optical materials by atomic layer deposition (ALD)
Selected Publication
• Y. T. Liu, C. S. Ku*, S. J. Chiu, H. Y. Lee*, and S. Y. Chen, “Ultrathin Oriented BiFeO3 Films from Atomic Layer Deposition with Greatly Improved Leakage and Ferroelectric Properties”, ACS Appl. Mater. Interfaces, 6 443−449 (2014).
• S. J. Chiu, L. C. Huang, S. N. Hsiao*, H. W. Chang, G. P. Yu, and H. Y. Lee*, “Exchange bias and crystal structure of epitaxial (111) FePt/BiFeO3 sputtered thin films”, J. Appl. Phys. 115 17D903 (2014).
• J. M. Huang, C. S. Ku*, H. Y. Lee*, C. M. Lin, and S. Y. Chen, “Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method”, Surf. Coat. Tech. 231, 323-327 (2013).
• S. N. Hsiao*, S. H. Liu, S. K. Chen*, T. S. Chin, and H. Y. Lee*, “Direct evidence for stress-induced (001) anisotropy of rapid-annealed FePt thin films”, Appl. Phys. Lett. 100, 261909 (2012).
• Y. T. Liu, S. J. Chiu, S. Y. Chen and H. Y. Lee*, “Preparation of BiFeO3/LaNiO3 Multiferroic Oxide Superlattice Structure by RF Sputtering”,Surf. Coat. Tech. 206, 1666-1672 (2011).
• C.-S. Ku, H. Y. Lee* J. M. Huang, and C. M. Lin, “Epitaxial growth of m-plane ZnO thin films on (10-1 0) sapphire substrate by atomic layer deposition with interrupted flow”, Cryst. Growth & Design 10, 1460-1463(2010).
• Y. C. Liang* and H. Y. Lee*, “Growth of Epitaxial Zirconium-doped Indium Oxide (222) at Low Temperature by rf Sputtering”,CrystEngComm 12, 3172-3176 (2010).
• C.-S. Ku, J. M. Huang, C.Y. Cheng, C. M. Lin, and H. Y. Lee*, “Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction growth by atomic layer deposition”, Appl. Phys. Lett. 97, 181915(2010).
• H. Y. Lee*, H.-J. Liu, Y. C. Liang, K. F. Wu and C. H. Lee, “Structural and dielectric properties of sputter-deposited Ba0.48Sr0.52TiO3/LaNiO3artificial superlattice films”, J. Electrochem. Soc. 156 (8) G114-G119 (2009).
• S. N. Hsiao, F. T. Yuan*, H. W. Chang, H. W. Huang, S. K. Chen*, and H. Y. Lee*, “Effect of initial stress/strain state on order-disorder transformation of FePt thin films” Appl. Phys. Lett. 94, 232505-1~3 (2009).