CSKu | nsrrcsrd

James C.-S. Ku (古慶順), Ph. D.

Assistant Research Scientist

Materials Science Group

Office: Room S116, R&D Building

E-Mail: csku@nsrrc.org.tw

Tel: +886-35780281-7119

Education

1995－1999 B.S. in Physics, Tung Hai University

1999－2000 M.S. in ElectroPhysics, Chiao Tung University

2000－2007 Ph.D. in ElectroPhysics, Chiao Tung University

Employment

2007－2010 Postdoctoral Researcher, NSRRC

2011－Now Assistant Research Scientist

Research Interest

1. Atomic Layer Deposition for II-VI & III-V compounds

2. Photoluminescence

3. X-ray diffraction & scattering

Selected Publication

1. Irradiation-induced microstructural evolution and swelling of 3C-SiC. Y.-R. Lin, C.-S. Ku, C.-Y. Ho, W.-T. Chuang, S. Kondo, and J.-J. Kai, J. Nucl. Mater. 459, 276 (2015).

2. Ultrathin Oriented BiFeO3 Films from Atomic Layer Deposition with Greatly Improved Leakage and Ferroelectric Properties. Y.-T. Liu, C.-S. Ku, S.-J. Chiu, H.-Y. Lee, and S.-Y. Chen, ACS Appl. Mater. Interf. 6, 443 (2014).

3. Growth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption method. J.-M. Huang, C.-S. Ku, H.-Y. Lee, C.-M. Lin, and S.-Y. Chen, Surf. Coat. Tech. 231, 323 (2013).

4. Annealing effect on the optical response and interdiffusion on n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition. C.-S. Ku, J.-M. Huang, C.-Y. Cheng, C.-M. Lin, and H.-Y. Lee, Appl. Phy. Lett. 97, 181915 (2010).

5. Epitaxial growth of m-plane ZnO thin films on (10-10) sapphire substrate by atomic layer deposition with interrupted flow. C.-S. Ku, H.-Y. Lee, J.-M. Huang, and C.-M. Lin, Cryst. Growth Des. 10, 1460 (2010).

6. Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow. C.-S. Ku, H.-Y. Lee, J.-M. Huang, and C.-M. Lin, Mater. Chem. Phys. 120, 236 (2010).

7. Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow. C.-S. Ku, J.-M. Huang, C.-M. Lin, and H.-Y. Lee 518, 1373 (2009).