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Chia-Hung Hsu (徐嘉鴻), Ph. D.

Research Scientist

Materials Science Group

Office: Room S118, R&D Building

E-Mail: chsu@nsrrc.org.tw

Tel: +886-35780281-7118

C.V

Education               

1986-1992 Ph.D. in Physics, Boston University, USA 

19841986 M.S. in Physics, University of California, Los Angeles, USA

19781982 B.S. in Physics, National Taiwan Normal University

 

Employment

2012- present Adjunct Professor, Graduate Program for Advanced Light Source, National Tsing-Hua University

2010- present Adjunct Professor, Department of Photonics, National Chiao-Tung University

2009-present  Scientist, Division of Scientific Research, NSRRC

2008-2010       Adjunct Associate Professor, Department of Photonics, National Chiao-Tung University

1993-2008       Associate Scientist, Division of Scientific Research, NSRRC

1992-1993       Postdoctoral Fellow, Division of Applied Sciences, Harvard University, USA

 

Research Interest

    My research interests focus on the thin film growth mechanism and structural properties of ultra-thin epitaxial films and various nano-materials. The major experimental tools are x-ray scattering and scanning probe microscopy. In the recent years, my group has been working on several subjects including:The crystal structure and interfacial atomic arrangement of epitaxial films of various metal oxides, especially high-k oxide for gate oxide application. The study provides valuable data to examine various thin film growth mechanisms and the role of interfacial chemistry. 

  The structural and optical properties of ZnO-based epitaxial optoelectronic thin film materials with particular emphasis on the defect structures, strain state and their influence to the optical and electrical performance of these epi-films. The growth of high quality polar and non-polar ZnO epitaxial films and multi-layers on various substrates is a focus of recent studies. Pulsed laser deposition, and RF sputtering growth are employed to fabricate the samples. The structure and composition characterization of various novel nano-materaials. Besides the subjects mentioned above, we have also involved in structural investigation of various novel thin film materials and developing new experimental techniques for structural and compositional characterization.

 

 

 

 

 

 

 

Reciprocal space maps (RSM) of Gd2O3 grown on GaN(001) taken near the (101) reflection of hexagonal Gd2O3. The evoluiton of the RSM profile evidences the hexagonal to monoclinic phase transition with increasing layer thickness. The multiple peaks observed in the monoclinic phase are due to the coexistence of 6 rotational domains of Gd2O3.

 

The epitaxial relationship of the ZnO grown on Y2O3(111) determined by X-ray scattering is shown on the left, from which we inferred the orientation of the ZnO lattice is anchored by the O-sublattice of Y2O3

 

Selected Publication

 

1. The Effect of Thermal Annealing on the Optical and Electrical Properties of ZnO Epitaxial Films Grown on n-GaAs (001). W.-R. Liu,* B.-H. Lin, C.-Y. Lin, S. Yang, C.-C. Kuo, F. S.-S. Chien, C.-S. Chang, C.-H. Hsu,* and W.-F. Hsieh, RSC Adv. 5, 12358 (2015).

 

2. Single crystal Gd2O3 epitaxially on GaAs(111)A". T. H. Chiang, S. Y. Wu, T.-S. Huang, C.-H. Hsu,* J. Kwo,* and M. Hong,* CrystEngComm 16, 8457 (2014).

 

3. Phase transformation of molecular beam epitaxy-grown nm thick Gd2O3 and Y2O3 on GaN. W. H. Chang, S. Y. Wu, C. H. Lee, T. Y. Lai, Y. J. Lee, P. Chang, C.-H. Hsu,* T. S. Huang, J. Kwo, and M. Hong,* ACS Appl. Mater. Inter. 5, 1436 (2013). 

 

4. Single Domain M-plane ZnO Grown on M-plane Sapphire by Radio-frequency Magnetron Sputtering. B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu,* W. F. Hsieh,* F. S.-S. Chien, and C. S. Chang, ACS Appl. Mater. Inter. 4, 5333 (2012).

 

5. The Influence of Dislocations on Optical and Electrical Properties of Epitaxial ZnO on Si (111) Using a -Al2O3 Buffer Layer. W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu,* W. F. Hsieh,* W. C. Lee, M. Hong, and J. Kwo, CrystEngComm 14, 1665 (2012).

 

6. The Growth of Epitaxial ZnO Film on Si(111) with Gd2O3(Ga2O3) Buffer Layer. B. H. Lin, W.-R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu,* W. F. Hsieh,* W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth & Design 11, 2846 (2011).

 

7. Structural Characteristics and Annealing Effect of ZnO Epitaxial Films Grown by Atomic Layer Deposition. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu,* and W.F. Hsieh,* Cryst. Growth Des. 9, 5184 (2009).

 

8. Nano-meter Thick Single Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-oxide-semiconductor Technology. W. H. Chang, C. H. Lee, Y. C. Chang, P. Chang, M. L. Huang, Y. J. Lee, C.-H. Hsu,* J. M. Hong, C. C. Tsai, J. Kwo,* and M. Hong, Adv. Mater. 21, 4970 (2009). 

 

9. Domain Matching Epitaxial Growth of High-quality ZnO Film Using a Y2O3 Buffer Layer on Si (111). W.-R. Liu, Y.-H. Li, W. F. Hsieh, * C.-H. Hsu,* W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 9, 239 (2009). 

 

10. Structural and Compositional Investigation of Yttrium-doped HfO2 Films Epitaxially Grown on Si (111). K. Yang, W. C., Lee Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu,* and J. Kwo,* Appl. Phys. Lett. 91, 202909 (2007)

 

 

 

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